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MGS05N60D

ON
Part Number MGS05N60D
Manufacturer ON
Description Insulated Gate Bipolar Transistor
Published Apr 27, 2005
Detailed Description MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS05N60D/D Insulated Gate Bipolar Transistor...
Datasheet PDF File MGS05N60D PDF File

MGS05N60D
MGS05N60D

Overview
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS05N60D/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes.
Fast switching characteristics result in efficient operation at higher frequencies.
This device is ideally suited for high frequency electronic ballasts.
Built–In Free Wheeling Diodes Built–In Gate Protection Zener Diode Industry Standard Package (TO92 — 1.
0 Watt) High Speed Eoff: Typical 6.
5 mJ @ IC = 0.
3 A; TC = 125°C and dV/dt = 1000 V/ms • Robust High Voltage Termination • Robust Turn–Off SOA C ™ Data Sheet MGS05N60D IGBT 0.
5 A @ 25°C 600 V •...


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