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MGY25N120

Part Number	MGY25N120
Manufacturer	Motorola
Description	Insulated Gate Bipolar Transistor
Published	Apr 27, 2005
Detailed Description	MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120/D Insulated Gate Bipolar Transistor...
Datasheet	MGY25N120 PDF File

Overview

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability.
Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time.
Fast switching characteristics result in efficient operation at high frequencies.
• • • • Industry Standard High Power TO–264 Package (TO–3PBL) High Speed Eoff: 273 mJ/A typical at 125°C High Short Circuit Capability – 10 ms minimum Robust High Voltage Termination ...

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