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M36W108AT

ST Microelectronics
Part Number M36W108AT
Manufacturer ST Microelectronics
Description 8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
Published May 2, 2005
Detailed Description M36W108AT M36W108AB 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product...
Datasheet PDF File M36W108AT PDF File

M36W108AT
M36W108AT

Overview
M36W108AT M36W108AB 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product PRELIMINARY DATA s SUPPLY VOLTAGE – VCCF = VCCS = 2.
7V to 3.
6V: for Program, Erase and Read s s ACCESS TIME: 100ns LOW POWER CONSUMPTION – Read: 40mA max.
(SRAM chip) – Stand-by: 30µA max.
(SRAM chip) – Read: 10mA max.
(Flash chip) – Stand-by: 100µA max.
(Flash chip) LBGA48 (ZM) 6 x 8 solder balls LGA48 (ZN) 6 x 8 solder lands BGA LGA FLASH MEMORY s 8 Mbit (1Mb x 8) BOOT BLOCK ERASE s s PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.
C.
) – Program Byte-by-Byte – Status Register bits and Ready/Busy Output Figure 1.
Logic Diagram s s s SECURITY PROTECTION MEMORY AREA INSTRUCTION ADDRESS CODING: 3 digits MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main Blocks 20 A0-A19 W EF G RP E1S E2S M36W108AT M36W108AB RB 8 DQ0-DQ7 VCCF VCCS s s BLOCK, MULTI-BLOCK and CHIP ERASE ERASE SUSPEND and RESUME MODES – Read and Program another B...


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