DatasheetsPDF.com

M36W108B

ST Microelectronics
Part Number M36W108B
Manufacturer ST Microelectronics
Description 8 Mbit 1Mb x8 / Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
Published May 2, 2005
Detailed Description M36W108T M36W108B 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product N...
Datasheet PDF File M36W108B PDF File

M36W108B
M36W108B


Overview
M36W108T M36W108B 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product NOT FOR NEW DESIGN s M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB SUPPLY VOLTAGE – VCCF = VCCS = 2.
7V to 3.
6V: for Program, Erase and Read s BGA LGA s s ACCESS TIME: 100ns LOW POWER CONSUMPTION – Read: 40mA max.
(SRAM chip) – Stand-by: 30µA max.
(SRAM chip) – Read: 10mA max.
(Flash chip) – Stand-by: 100µA max.
(Flash chip) LBGA48 (ZM) 6 x 8 solder balls LGA48 (ZN) 6 x 8 solder lands FLASH MEMORY s 8 Mbit (1Mb x 8) BOOT BLOCK ERASE s s Figure 1.
Logic Diagram PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.
C.
) – Program Byte-by-Byte – Status Register bits and Ready/Busy Output VCCF VCCS s MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main Blocks A0-A19 W EF G RP E1S E2S M36W108T M36W108B RB 20 8 DQ0-DQ7 s s BLOCK, MULTI-BLOCK and CHIP ERASE ERASE SUSPEND and RESUME MODES – Read and Program...



Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)