DatasheetsPDF.com

M74HC03

ST Microelectronics
Part Number M74HC03
Manufacturer ST Microelectronics
Description QUAD 2-INPUT OPEN DRAIN NAND GATE
Published May 6, 2005
Detailed Description M74HC03 QUAD 2-INPUT OPEN DRAIN NAND GATE s s s s s s HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V LOW POWER DISSIPATI...
Datasheet PDF File M74HC03 PDF File

M74HC03
M74HC03

Overview
M74HC03 QUAD 2-INPUT OPEN DRAIN NAND GATE s s s s s s HIGH SPEED: tPD = 8ns (TYP.
) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.
) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.
) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 03 DIP SOP TSSOP ORDER CODES PACKAGE DIP SOP TSSOP TUBE M74HC03B1R M74HC03M1R T&R M74HC03RM13TR M74HC03TTR DESCRIPTION The M74HC03 is an high speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with silicon gate C2MOS technology.
The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output.
This device can, with an external pull-up resistor, be used in wired AND configuration.
This device can be also used as a led driver and in any other application requiring a current sink.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS July 2001 1/8 M74HC03 INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1, 4, 9, 12 2, 5, 10, 13 3, 6, 8, 11 7 14 SYMBOL 1A to 4A 1B to 4B 1Y to 4Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H Z : High Impedance B L H L H Y Z Z Z L ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.
5 to +7 -0.
5 to VCC + 0.
5 -0.
5 to VCC + 0.
5 ± 20 ± 20 + 25 ± 50 500(*) -65 to +150 300 Unit V V V mA mA mA mA mW °C °C ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg TL Storage Temperature Lead Temperature (10 sec) Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is not implied (*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C RECOMMENDED O...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)