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MJE243

Part Number	MJE243
Manufacturer	ON
Description	POWER TRANSISTORS
Published	May 7, 2005
Detailed Description	www.DataSheet4U.com MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These ...
Datasheet	MJE243 PDF File

Overview

www.
DataSheet4U.
com MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications.
Features http://onsemi.
com • High Collector−Emitter Sustaining Voltage − • High DC Current Gain @ IC = 200 mAdc • • • • hFE = 40−200 = 40−120 Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.
3 Vdc (Max) @ IC = 500 mAdc High Current Gain Bandwidth Product − fT = 40 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages ICBO = 100 nAdc (Max) @ Rated VCB Pb−Free Packages are Available* VCEO(sus) = 100 Vdc (Min) 4.
0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS TO−225 CASE 77 STYLE 1 3 2 1 ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎ...

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