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NE72218

NEC
Part Number NE72218
Manufacturer NEC
Description C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
Published May 7, 2005
Detailed Description DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gai...
Datasheet PDF File NE72218 PDF File

NE72218
NE72218

Overview
DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.
5 dB TYP.
@ f = 12 GHz • Gate length • Gate width • 4-pin super minimold package • Tape & reel packaging only available : Lg = 0.
8 µm : Wg = 400 µm ORDERING INFORMATION Part Number NE72218-T1 Package 4-pin super minimold Supplying Form • 8 mm wide embossed taping • Pin 3 (Source), Pin 4 (Drain) face the perforation side of the tape • Qty 3 kpcs/reel • 8 mm wide embossed taping • Pin 1 (Source), Pin 2 (Gate) face the perforation side of the tape • Qty 3 kpcs/reel NE72218-T2 Remark To order evaluation samples, consult your NEC sales representative (Part number for sample order: NE72218).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID Ptot Tch Tstg Ratings 5.
0 −5.
0 IDSS 250 125 −65 to +125 Unit V V mA mW °C °C Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
P12750EJ3V0DS00 (3rd edition) Date Published August 2000 NS CP(K) Printed in Japan The mark • shows major revised points.
© 1997, 2000 NE72218 ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Phase Noise Symbol IGSO IDSS VGS (off) gm PN VGS = −5 V VDS = 3 V, VGS = 0 V VDS = 3 V, ID = 100 µA VDS = 3 V, ID = 30 mA VDS = 3 V, ID = 30 mA, f = 11 GHz, 100 kHz offset VDS = 3 V, ID = 30 mA, f = 11 GHz, 10 kHz offset Power Gain Output Power at 1 dB Gain Compression Point GS PO (1 dB) VDS = 3 V,...


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