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PMBT3904

Philips
Part Number PMBT3904
Manufacturer Philips
Description NPN switching transistor
Published May 9, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT3904 NPN switching transistor Product specification Super...
Datasheet PDF File PMBT3904 PDF File

PMBT3904
PMBT3904

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT3904 NPN switching transistor Product specification Supersedes data of 1997 May 20 1999 Apr 27 Philips Semiconductors Product specification NPN switching transistor FEATURES • Low current (max.
100 mA) • Low voltage (max.
40 V).
APPLICATIONS • Telephony and professional communication equipment.
DESCRIPTION NPN switching transistor in a SOT23 plastic package.
PNP complement: PMBT3906.
MARKING TYPE NUMBER PMBT3904 Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING CODE(1) ∗1A Top view handbook, halfpage PMBT3904 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM255 Fig.
1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
MAX.
60 40 6 100 200 100 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 27 2 Philips Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; note 1; Fig.
2 IC = 0.
1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 1 mA IC = 50 mA; I...


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