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PMBT3904D

Philips
Part Number PMBT3904D
Manufacturer Philips
Description NPN switching double transistor
Published May 9, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMBT3904D NPN switching double transistor Product specificati...
Datasheet PDF File PMBT3904D PDF File

PMBT3904D
PMBT3904D

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMBT3904D NPN switching double transistor Product specification 1999 Dec 15 Philips Semiconductors Product specification NPN switching double transistor FEATURES • Low current (max.
100 mA) • Low voltage (max.
40 V) • Reduces number of components and board space.
APPLICATIONS • Telephony and professional communication equipment.
DESCRIPTION Two independently operating NPN switching transistors in a SC-74, six lead, SMD plastic package.
MARKING TYPE NUMBER PMBT3904D D1 MARKING CODE handbook, halfpage 6 PMBT3904D PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 5 4 6 5 4 TR2 TR1 1 Top view 2 3 MAM432 1 2 3 Fig.
1 Simplified outline (SC-74) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL Per transistor VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Per device Ptot Note 1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
total power dissipation Tamb ≤ 25 °C; note 1 − 600 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open emitter open base open collector − − − − − − −65 − −65 60 40 6 100 200 300 +150 150 +150 V V V mA mA mW °C °C °C PARAMETER CONDITIONS MIN.
MAX.
UNIT 1999 Dec 15 2 Philips Semiconductors Product specification NPN switching double transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 PMBT3904D VALUE 208 UNIT K/W 1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL Per transistor ICBO IEBO hFE collector cut-off current emitter cut-off current DC current ga...


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