DatasheetsPDF.com

PMBT5550

Philips
Part Number PMBT5550
Manufacturer Philips
Description NPN high-voltage transistor
Published May 9, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5550 NPN high-voltage transistor Product specification Su...
Datasheet PDF File PMBT5550 PDF File

PMBT5550
PMBT5550

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5550 NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 16 1999 Apr 15 Philips Semiconductors Product specification NPN high-voltage transistor FEATURES • Low current (max.
300 mA) • Low voltage (max.
140 V).
APPLICATIONS • Telephony.
DESCRIPTION handbook, halfpage PMBT5550 PINNING PIN 1 2 3 base emitter collector DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package.
PNP complement: PMBT5401.
MARKING TYPE NUMBER PMBT5550 Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING CODE(1) ∗1F Top view 3 3 1 2 1 2 MAM255 Fig.
1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
MAX.
160 140 6 300 600 100 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 15 2 Philips Semiconductors Product specification NPN high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 100 V IE = 0; VCB = 100 V; Tamb = 100 °C IC = 0; VEB = 4 V VCE = 5 V; (see Fig.
2) IC = 1 mA IC = 10 mA IC = 50 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IC = 10 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)