DatasheetsPDF.com

PMBT5551

Philips
Part Number PMBT5551
Manufacturer Philips
Description NPN high-voltage transistor
Published May 9, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5551 NPN high-voltage transistor Product specification Su...
Datasheet PDF File PMBT5551 PDF File

PMBT5551
PMBT5551

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5551 NPN high-voltage transistor Product specification Supersedes data of 1997 Jul 02 1999 Apr 15 Philips Semiconductors Product specification NPN high-voltage transistor FEATURES • Low current (max.
300 mA) • High voltage (max.
160 V).
APPLICATIONS • General purpose • Telephony.
DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package.
PNP complement: PMBT5401.
MARKING 1 2 handbook, halfpage PMBT5551 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 TYPE NUMBER PMBT5551 Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING CODE(1) Top view MAM255 ∗G1 Fig.
1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN.
MAX.
180 160 6 300 600 100 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 15 2 Philips Semiconductors Product specification NPN high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 PMBT5551 VALUE 500 UNIT K/W CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 120 V IE = 0; VCB = 120 V; Tamb = 100 °C IC = 0; VEB = 4 V VCE = 5 V; (see Fig.
2) IC = 1 mA IC = 10 mA IC = 50 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)