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NDC631N

Fairchild
Part Number NDC631N
Manufacturer Fairchild
Description N-Channel MOSFET
Published May 12, 2005
Detailed Description July 1996 NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel l...
Datasheet PDF File NDC631N PDF File

NDC631N
NDC631N

Overview
July 1996 NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features 4.
1 A, 20 V.
RDS(ON) = 0.
06 Ω @ VGS = 4.
5 V RDS(ON) = 0.
075 Ω @ VGS =2.
7 V.
Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
____________________________________________________________________________________________ 4 3 5 2 6 1 Absolute Maximum Ratings T A = 25°C unless otherwise note Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) (Note 1a) NDC631N 20 8 4.
1 15 1.
6 1 0.
8 -55 to 150 Units V V A W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDC631N Rev.
D1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 16 V, VGS = 0 V TJ = 55oC Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 8 V, VDS = 0 V VGS = -8 V, VDS= 0 V VDS = VGS, ID = 250 µA...


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