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NDC632P

Fairchild
Part Number NDC632P
Manufacturer Fairchild
Description P-Channel MOSFET
Published May 12, 2005
Detailed Description June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel log...
Datasheet PDF File NDC632P PDF File

NDC632P
NDC632P

Overview
June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features -2.
7A, -20V.
RDS(ON) = 0.
14Ω @ VGS = -4.
5V RDS(ON) = 0.
2Ω @ VGS = -2.
7V.
Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
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