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NDH8503N

Fairchild
Part Number NDH8503N
Manufacturer Fairchild
Description Dual N-Channel MOSFET
Published May 12, 2005
Detailed Description May 1997 NDH8503N Dual N-Channel Enhancement Mode Field Effect Transistor General Description SuperSOT -8 N-Channel enh...
Datasheet PDF File NDH8503N PDF File

NDH8503N
NDH8503N

Overview
May 1997 NDH8503N Dual N-Channel Enhancement Mode Field Effect Transistor General Description SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as notebook computer power management, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
TM Features 3.
8 A, 30 V.
RDS(ON) = 0.
033 Ω @ VGS = 10 V RDS(ON) = 0.
05 Ω @ VGS = 4.
5 V.
Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings T A = 25°C unless otherwise note Symbol VDSS VGSS ID PD TJ,TSTG RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation Operating and Storage Temperature Range (Note 1 ) (Note 1) NDH8503N 30 ±20 3.
8 10.
5 0.
8 -55 to 150 Units V V A W °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) (Note 1) 156 40 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDH8503N Rev.
C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V TJ = 55oC Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 250 µA TJ = 125oC Static Drain-Source On-Resistance...


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