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NDH8504P

Fairchild
Part Number NDH8504P
Manufacturer Fairchild
Description Dual P-Channel MOSFET
Published May 12, 2005
Detailed Description February 1997 NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor General Description SuperSOT -8 P-Channe...
Datasheet PDF File NDH8504P PDF File

NDH8504P
NDH8504P

Overview
February 1997 NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor General Description SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
TM Features -2.
7 A, -30 V.
RDS(ON) = 0.
07Ω @ VGS = -10 V RDS(ON) = 0.
115 Ω @ VGS = -4.
5 V.
Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
___________________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation Operating and Storage Temperature Range (Note 1) (Note 1) NDH8504P -30 ±20 -2.
7 -8 0.
8 -55 to 150 Units V V A W °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) (Note 1) 156 40 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDH8504P Rev.
C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA VDS = -24V, VGS = 0 V TJ= 55°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = - 250 µA TJ= 125°C Static Drain-So...


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