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NDP6030PL

Fairchild
Part Number NDP6030PL
Manufacturer Fairchild
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Published May 12, 2005
Detailed Description June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Thes...
Datasheet PDF File NDP6030PL PDF File

NDP6030PL
NDP6030PL

Overview
June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features -30 A, -30 V.
RDS(ON) = 0.
042 Ω @ VGS= -4.
5 V RDS(ON) = 0.
025 Ω @ VGS= -10 V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON).
175°C maximum junction temperature rating.
________________________________________________________________________________ S G D Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP6030PL -30 ±16 -30 -90 75 0.
5 -65 to 175 275 -65 to 175 NDB6030PL Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C W TJ,TSTG TL TJ,TSTG RθJC RθJA Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Operating and Storage Temperature Range °C °C °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 62.
5 °C/W °C/W NDP6030PL Rev.
B1 © 1997 Fairchild Semiconductor Corporation Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA ID = -250 ...


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