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NDP6030

Fairchild
Part Number NDP6030
Manufacturer Fairchild
Description N-Channel Enhancement Mode Field Effect Transistor
Published May 12, 2005
Detailed Description July 1997 NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enh...
Datasheet PDF File NDP6030 PDF File

NDP6030
NDP6030


Overview
July 1997 NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 46 A, 30 V.
RDS(ON) = 0.
018 @ VGS=10 V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP6030 30 30 ±20 46 135 75 0.
5 -65 to 175 NDB6030 Units V V V A Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed PD Total Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C TJ,TSTG RθJC Rθ JA Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 62.
5 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDP6030.
RevB Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note) W DSS IAR BVDSS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 46 A 100 46 mJ A OFF CHARACTERISTICS Drain-Sourc...


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