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NDS9435A

Fairchild
Part Number NDS9435A
Manufacturer Fairchild
Description 30V P-Channel MOSFET
Published May 12, 2005
Detailed Description NDS9435A January 2002 NDS9435A 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugge...
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NDS9435A
NDS9435A

Overview
NDS9435A January 2002 NDS9435A 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.
5V – 25V).
Applications • Power management • Load switch • Battery protection Features • –5.
3 A, –30 V RDS(ON) = 50 mΩ @ VGS = –10 V RDS(ON) = 80 mΩ @ VGS = –4.
5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DDDD DD DD SO-8 Pin 1 SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size NDS9435A NDS9435A 13’’ 5 6 7 8 Ratings –30 ±25 –5.
3 –50 2.
5 1.
2 1 –55 to +175 50 125 25 Tape width 12mm 4 3 2 1 Units V V A W °C °C/W °C/W °C/W Quantity 2500 units 2002 Fairchild Semiconductor Corporation NDS9435A Rev E(W) NDS9435A Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR Gate–Body Leakage, Forward Gate–Body Leakage, Reverse VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –24 V, VGS = 25 V, VGS = –25 V VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics (Note 2) VGS(th) Gate Threshol...


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