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NDS9430

Fairchild
Part Number NDS9430
Manufacturer Fairchild
Description 30V P-Channel PowerTrench MOSFET
Published May 12, 2005
Detailed Description NDS9430 May 2002 NDS9430 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate ...
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NDS9430
NDS9430

Overview
NDS9430 May 2002 NDS9430 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.
5V – 20V).
Features • –5.
3 A, –30 V RDS(ON) = 60 mΩ @ VGS = –10 V RDS(ON) =100 mΩ @ VGS = –4.
5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • Power management • Load switch • Battery protection D D D D SO-8 DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings –30 ±20 (Note 1a) Units V V A W –5.
3 –20 2.
5 1.
2 1 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W Package Marking and Ordering Information Device Marking NDS9430 2002 Fairchild Semiconductor Corporation Device NDS9430 Reel Size 13’’ Tape width 12mm Quantity 2500 units NDS9430 Rev B NDS9430 Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –24 V, VGS = 20 V, VGS = –20 V VGS = 0 V VDS = 0 V VDS = 0 V Min –30 Typ Max Units V Off Characteristics –23 –1 100 –100 –1 –1.
7 4.
5 42 65 ...


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