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NDS9933A

Fairchild
Part Number NDS9933A
Manufacturer Fairchild
Description Dual P-Channel MOSFET
Published May 12, 2005
Detailed Description NDS9933A January 1999 NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description This P-Chan...
Datasheet PDF File NDS9933A PDF File

NDS9933A
NDS9933A

Overview
NDS9933A January 1999 NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage apllications such as DC motor control and DC/ DC conversion where fast switching,low in-line power loss, and resistance to transients are needed.
Features • -2.
8 A, -20 V.
RDS(on) = 0.
14 Ω @ VGS = -4.
5 V RDS(on) = 0.
19 Ω @ VGS = -2.
7 V RDS(on) = 0.
20 Ω @ VGS = -2.
5 V.
• High density cell design for extremely low RDS(on).
• High power and current handling capability in a widely used surface mount package.
• Dual MOSFET in surface mount package.
D2 D1 D1 D2 5 6 4 3 2 1 G1 SO-8 S1 G1 S2 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter NDS9933A -20 (Note 1a) Units V V A W ±8 -2.
8 -10 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.
6 1 0.
9 -55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Outlines and Ordering Information Device Marking NDS9933A ©1999 Fairchild Semiconductor Corporation Device NDS9933A Reel Size 13’’ Tape Width 12mm Quantity 2500 units NDS9933A Rev.
A NDS9933A Electrical Characteristics Symbol BVDSS BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note...


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