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NDS9936

Fairchild
Part Number NDS9936
Manufacturer Fairchild
Description Dual N-Channel MOSFET
Published May 12, 2005
Detailed Description February 1996 NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enha...
Datasheet PDF File NDS9936 PDF File

NDS9936
NDS9936


Overview
February 1996 NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 5A, 30V.
RDS(ON) = 0.
05Ω @ VGS = 10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
Dual MOSFET in surface mount package.
________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous @ TA = 25°C - Continuous @ TA = 70°C - Pulsed PD @ TA = 25°C Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1a) NDS9936 30 ± 20 ± 5.
0 ± 4.
0 ± 40 2 1.
6 1 0.
9 -55 to 150 78 40 Units V V A W TJ,TSTG Operating and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case °C °C/W °C/W THERMAL CHARACTERISTICS RθJA RθJC (Note 1a) (Note 1) © 1997 Fairchild Semiconductor Corporation NDS9936.
SAM Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Conditions VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V TJ= 55°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 20 V, VDS = 0 V VGS...


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