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NDT451

Fairchild
Part Number NDT451
Manufacturer Fairchild
Description N-Channel MOSFET
Published May 12, 2005
Detailed Description September 1996 NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhan...
Datasheet PDF File NDT451 PDF File

NDT451
NDT451

Overview
September 1996 NDT451N N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features 5.
5A, 30V.
RDS(ON) = 0.
05Ω @ VGS = 10V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
___________________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25°C unless otherwise noted NDT451N 30 ±20 (Note 1a) Units V V A ±5.
5 ±25 (Note 1a) (Note 1b) (Note 1c) 3 1.
3 1.
1 -65 to 150 W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 °C/W °C/W * Order option J23Z for cropped center drain lead.
© 1997 Fairchild Semiconductor Corporation NDT451N Rev.
C2 Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V TJ = 55°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 250 µA TJ = 125°C Static Drain-Source On-Resistance VGS = 10 V, ID = 5.
5 A TJ = 125°C VGS ...


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