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NE321000

Part Number	NE321000
Manufacturer	NEC
Description	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Published	May 12, 2005
Detailed Description	DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHI...
Datasheet	NE321000 PDF File

Overview

DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications.
FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.
35 dB TYP.
Ga = 13.
5 dB TYP.
@ f = 12 GHz • Gate Length: Lg ≤ 0.
20 µm • Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE321000 Standard (Grade D) Quality Grade Remark To order evaluation samples, please contact your local NEC sales office...

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