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SEMD12

Infineon Technologies AG
Part Number SEMD12
Manufacturer Infineon Technologies AG
Description NPN/PNP Silicon Digital Transistor Array Preliminary data
Published May 18, 2005
Detailed Description SEMD12 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, drive...
Datasheet PDF File SEMD12 PDF File

SEMD12
SEMD12

Overview
SEMD12 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=47kΩ, R2 =47kΩ) Tape loading orientation Top View 3 2 1 4 5 3 6 1 2 Marking on SOT666 package (for example W R) corresponds to pin 1 of device Position in tape: pin 1 same of feed hole side C1 6 B2 5 E2 4 R2 R1 TR1 R2 1 2 B1 3 C2 EHA07176 TR2 R1 4 5 6 Direction of Unreeling Type SEMD12 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS ≤ 300 1For calculation of R thJA please refer to Application Note Thermal Resistance WR E1 Marking W8 Pin Configuration Package 1=E1 2=B2 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 10 50 70 250 150 -65 .
.
.
150 Unit V mA mW °C K/W 1 Feb-26-2004 SEMD12 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min.
DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.
3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 fT 130 R1 R1/R2 32 0.
9 47 1 62 1.
1 Vi(on) 1 3 Vi(off) 0.
8 1.
5 VCEsat 0.
3 hFE 70 IEBO 164 ICBO 100 V(BR)CBO 50 V(BR)CEO 50 typ.
max.
Unit V nA µA V kΩ - MHz pF 1) Pulse test: t < 300µs; D < 2% 2 Feb-26-2004 SEMD12 NPN Type DC Current Gain ...


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