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SFS9510

Fairchild Semiconductor
Part Number SFS9510
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published May 20, 2005
Detailed Description Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n ...
Datasheet PDF File SFS9510 PDF File

SFS9510
SFS9510

Overview
Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.
) @ VDS = -100V n Low RDS(ON) : 0.
912 Ω (Typ.
) SFS9510 BVDSS = -100 V RDS(on) = 1.
2 Ω ID = -2.
5 A TO-220F 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8” from case for 5-seconds o 2 O 1 O 1 O 3 O o o Value -100 -2.
5 -1.
8 1 O Units V A A V mJ A mJ V/ns W W/ C o -10 ±30 50 -2.
5 1.
6 -6.
5 16 0.
11 - 55 to +175 o C 300 Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ.
--Max.
9.
38 62.
5 Units o C/W Rev.
C SFS9510 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min.
Typ.
Max.
Units -100 --2.
0 ------------------0.
1 ------1.
6 260 50 17 10 20 25 12 9 1.
5 4.
3 ---4.
0 -100 100 -10 -100 1.
2 -335 80 25 30 50 60 35 10 --nC ns pF µA Ω S V o P-CHANNEL POWER MOSFET Test Co...


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