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SFS9530

Fairchild Semiconductor
Part Number SFS9530
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published May 20, 2005
Detailed Description Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n ...
Datasheet PDF File SFS9530 PDF File

SFS9530
SFS9530

Overview
Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.
) @ VDS = -100V n Low RDS(ON) : 0.
225 Ω (Typ.
) SFS9530 BVDSS = -100 V RDS(on) = 0.
3 Ω ID = -8 A TO-220F 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8” from case for 5-seconds o o o Value -100 -8.
0 -5.
6 1 O Units V A A V mJ A mJ V/ns W W/ C o -32 ±30 340 -8.
0 3.
9 -6.
5 39 0.
26 - 55 to +175 O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ.
--Max.
3.
85 62.
5 Units o C/W Rev.
C SFS9530 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min.
Typ.
Max.
Units -100 --2.
0 ------------------0.
1 ------4.
9 160 60 13 22 45 25 30 5.
4 12.
2 ---4.
0 -100 100 -10 -100 0.
3 -240 90 35 55 100 60 38 --nC ns µA Ω S pF V o P-CHANNEL POWER MOSFET Test Condi...


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