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SFU9110

Fairchild Semiconductor
Part Number SFU9110
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published May 20, 2005
Detailed Description Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n ...
Datasheet PDF File SFU9110 PDF File

SFU9110
SFU9110

Overview
Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.
) @ VDS = -100V n Lower RDS(ON) : 0.
912 Ω (Typ.
) SFR/U9110 BVDSS = -100 V RDS(on) = 1.
2 Ω ID = -2.
8 A D-PAK 2 1 3 1 I-PAK 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -100 -2.
8 -2.
0 1 O Units V A A V mJ A mJ V/ns W W W/ C o 11 ±30 52 -2.
8 2.
0 -6.
5 2.
5 20 0.
16 - 55 to +150 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for So...


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