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SFU9130

Fairchild Semiconductor
Part Number SFU9130
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Jan 24, 2007
Detailed Description www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input...
Datasheet PDF File SFU9130 PDF File

SFU9130
SFU9130


Overview
www.
DataSheet4U.
com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = -100V Lower RDS(ON) : 0.
225 Ω (Typ.
) 1 SFR/U9130 BVDSS = -100 V RDS(on) = 0.
3 Ω ID = -9.
8 A D-PAK 2 1 3 I-PAK 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -100 -9.
8 -6.
9 1 O Units V A A V mJ A mJ V/ns W W W/ C o 39 + _ 20 320 -9.
8 5.
7 -6.
5 2.
5 57 0.
46 - 55 to +150 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8” from case for 5-seconds o TJ , TSTG TL o C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ.
---Max.
2.
19 50 110 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount).
Rev.
B ©1999 Fairchild Semiconductor Corporation SFR/U9130 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min.
Typ.
Max.
Units -100 --2.
0 ------------------0.
1 ------5.
2 160 60 13 22 45 25 30 5.
4...


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