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SFWI9614

Fairchild Semiconductor
Part Number SFWI9614
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published May 20, 2005
Detailed Description Advanced Power MOSFET FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν ...
Datasheet PDF File SFWI9614 PDF File

SFWI9614
SFWI9614

Overview
Advanced Power MOSFET FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.
) @ VDS = -250V ν Low RDS(ON) : 3.
5 Ω (Typ.
) 1 SFW/I9614 BVDSS = -250 V RDS(on) = 4.
0 Ω ID = -1.
6 A D2-PAK 2 I2-PAK 1 3 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -250 -1.
6 -1.
0 1 O Units V A A V mJ A mJ V/ns W W W/ C o -6.
5 + _ 30 112 -1.
6 2.
0 -4.
8 3.
1 20 0.
16 - 55 to +150 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for...


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