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SFWI9620

Fairchild Semiconductor
Part Number SFWI9620
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published May 20, 2005
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File SFWI9620 PDF File

SFWI9620
SFWI9620

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = -200V Low RDS(ON) : 1.
111 Ω (Typ.
) 1 SFW/I9620 BVDSS = -200 V RDS(on) = 1.
5 Ω ID = -3.
5 A D2-PAK 2 I2-PAK 1 3 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -200 -3.
5 -2.
2 1 O Units V A A V mJ A mJ V/ns W W W/ C o -14 + _ 30 327 -3.
5 3.
8 -5.
0 3.
1 38 0.
3 - 55 to +150 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Pur...


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