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SPP04N60C2

Infineon
Part Number SPP04N60C2
Manufacturer Infineon
Description Cool MOS Power Transistor
Published May 21, 2005
Detailed Description Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage techn...
Datasheet PDF File SPP04N60C2 PDF File

SPP04N60C2
SPP04N60C2

Overview
Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.
95 4.
5 P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP04N60C2 SPB04N60C2 SPA04N60C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4304 Q67040-S4305 Marking 04N60C2 04N60C2 04N60C2 P-TO220-3-31 Q67040-S4330 Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit Continuous drain current TC = 25 °C TC = 100 °C A 4.
5 2.
8 4.
51) 2.
81) 9 130 0.
4 4.
5 6 ±20 ±30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =3.
6A, VDD =50V ID puls EAS EAR IAR 9 130 0.
4 4.
5 6 ±20 ±30 A mJ Avalanche energy, repetitive tAR limited by Tjmax 2) ID =4.
5A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS = 4.
5 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C A V/ns V W dv/dt VGS VGS Ptot Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 50 31 Operating and storage temperature Page 1 Tj , Tstg -55.
.
.
+150 °C 2002-08-12 Final data Thermal Characteristics Parameter Characteristics SPP04N60C2, SPB04N60C2 SPA04N60C2 Symbol min.
Values typ.
max.
Unit Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Linear derating factor Linear derating factor, FullPAK Soldering temperature, 1.
6 mm (0.
063 in.
) from case for 10s RthJC RthJC_FP RthJA RthJA_FP RthJA - 35 - 2.
5 4 62 80 62 0.
4 0.
25 260 K/W W/K °C Tsold - Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.
25mA V(BR)DSS V(BR)DS VGS(th) IDSS 6...


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