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SPP04N60S5

Infineon
Part Number SPP04N60S5
Manufacturer Infineon
Description Power Transistor
Published May 21, 2005
Detailed Description Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan...
Datasheet PDF File SPP04N60S5 PDF File

SPP04N60S5
SPP04N60S5

Overview
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP04N60S5 VDS RDS(on) ID 600 V 0.
95 Ω 4.
5 A PG-TO220 2 P-TO220-3-1 23 1 Type SPP04N60S5 Package PG-TO220 Ordering Code Q67040-S4200 Marking 04N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 3.
4 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 4.
5 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature IAR VGS VGS Ptot Tj , Tstg Value Unit A 4.
5 2.
8 9 130 mJ 0.
4 4.
5 A ±20 V ±30 50 W -55.
.
.
+150 °C Rev.
2.
6 Page 1 2007-08-30 SPP04N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 4.
5 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.
6 mm (0.
063 in.
) from case for 10s3) Symbol RthJC RthJA RthJA Tsold Values Unit min.
typ.
max.
- - 2.
5 K/W - - 62 - - 62 - 35 - - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min.
typ.
max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.
25mA 600 - Drain-Source avalanche V(BR)DS VGS=0V, ID=4.
5A - 700 breakdown voltage -V - Gate threshold voltage VGS(th) ID=200µΑ, VGS=VDS 3.
5 4.
5 5.
5 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, µA Tj=25°C, - 0.
5 1 Tj=150°C - - 50 Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA ...


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