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28F016SV

Intel
Part Number 28F016SV
Manufacturer Intel
Description 16-MBIT (1 MBIT x 16 / 2 MBIT x 8) FlashFile MEMORY
Published May 28, 2005
Detailed Description E n n n n n n n 28F016SV 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile™ MEMORY Includes Commercial and Extended Temperatu...
Datasheet PDF File 28F016SV PDF File

28F016SV
28F016SV

Overview
E n n n n n n n 28F016SV 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile™ MEMORY Includes Commercial and Extended Temperature Specifications SmartVoltage Technology  User-Selectable 3.
3V or 5V V CC  User-Selectable 5V or 12V V PP 65 ns Access Time 1 Million Erase Cycles per Block 30.
8 MB/sec Burst Write Transfer Rate 0.
48 MB/sec Sustainable Write Transfer Rate Configurable x8 or x16 Operation 56-Lead TSOP and SSOP Type I Packages n n Backwards-Compatible with 28F016SA, 28F008SA Command Set Revolutionary Architecture  Multiple Command Execution  Program during Erase  Command Super-Set of the Intel 28F008SA  Page Buffer Program 2 µA Typical Deep Power-Down 32 Independently Lockable Blocks State-of-the-Art 0.
6 µm ETOX™ IV Flash Technology n n n Intel’s 28F016SV 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for designing embedded direct-execute code and mass storage data/file flash memory systems.
With innovative capabilities, low-power operation, user-selectable VPP voltage and high read/program performance, the 28F016SV enables the design of truly mobile, high-performance personal computing and communications products.
The 28F016SV is the highest density, highest performance nonvolatile read/program solution for solid-state storage applications.
Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit and 28F016SA 16-Mbit FlashFile memories), extended cycling, flexible VCC and VPP voltage (SmartVoltage technology), fast program and read performance and selective block locking, provide a highly-flexible memory component suitable for Resident Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives.
The 28F016SV’s dual read voltage enables the design of memory cards which can be read/written in 3.
3V and 5V systems interchangeably.
Its x8/x16 architecture allows optimization of the memory-to-processor interface.
The flexible block locking option enables bundling of executable application sof...


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