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28F016XD

Intel
Part Number 28F016XD
Manufacturer Intel
Description 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
Published May 28, 2005
Detailed Description E n n n n n n 28F016XD 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY n n n n n n n 56-Lead TSOP Type I Package Back...
Datasheet PDF File 28F016XD PDF File

28F016XD
28F016XD


Overview
E n n n n n n 28F016XD 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY n n n n n n n 56-Lead TSOP Type I Package Backwards-Compatible with 28F008SA Command Set 2 µA Typical Deep Power-Down Current 1 mA Typical I CC Active Current in Static Mode 32 Separately-Erasable/Lockable 64-Kbyte Blocks 1 Million Erase Cycles per Block State-of-the-Art 0.
6 µm ETOX™ IV Flash Technology 85 ns Access Time (t RAC)  Supports both Standard and FastPage-Mode Accesses Multiplexed Address Bus  RAS# and CAS# Control Inputs No-Glue Interface to Many Memory Controllers SmartVoltage Technology  User-Selectable 3.
3V or 5V V CC  User-Selectable 5V or 12V V PP 0.
33 MB/sec Write Transfer Rate x16 Architecture Intel’s 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products.
Combining its DRAM-like read performance and interface with the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for improved system performance.
The innovative capabilities of the 28F016XD enable the design of direct-execute code and mass storage data/file flash memory systems.
The 28F016XD’s DRAM-like interface with a multiplexed address bus, flexible VCC and VPP voltages, power saving features, extended cycling, fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a highly flexible memory component suitable for resident flash component arrays on the system board or SIMMs.
The DRAM-like interface with RAS# and CAS# control inputs allows for easy migration to flash memory in existing DRAM-based systems.
The 28F016XD’s dual read voltage allows the same component to operate at either 3.
3V or 5.
0V VCC.
Programming voltage at 5.
0V VPP minimizes external circuitry in minimal-chip, space critical designs, while the 12.
0V V...



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