DatasheetsPDF.com

BAW78M

Siemens Group
Part Number BAW78M
Manufacturer Siemens Group
Description Silicon Switching Diode (Switching applications High breakdown voltage)
Published Jun 3, 2005
Detailed Description BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage 4 5 3 2 1 VPW05980 ...
Datasheet PDF File BAW78M PDF File

BAW78M
BAW78M



Overview
BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage 4 5 3 2 1 VPW05980 Type BAW 78M Marking GDs Ordering Code Pin Configuration Q62702-A3471 Package 1 = A 2 = C 3 n.
c.
4 n.
c.
5 = C SCT-595 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, T S ≤ 110 °C Junction temperature Storage temperature Symbol Values 400 400 1 1 10 1 150 - 65 .
.
.
+150 Unit V A VR VRM IF I FM I FS Ptot Tj T stg W °C Thermal Resistance Junction - ambient 1) RthJA RthJS ≤ 95 ≤ 40 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.
5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Jul-27-1998 1998-11-01 BAW 78M Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC characteristics Breakdown voltage Symbol min.
Values typ.
max.
V Unit V(BR) VF 400 I (BR) = 100 µA Forward voltage IF = 1 A IF = 2 A Reverse current - - 1.
6 2 1 50 µA IR IR - VR = 400 V Reverse current VR = 400 V, T A = 150 °C AC characteristics Diode capacitance CD trr - 10 1 - pF ns VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω, measured at IR = 20mA Test circuit for reverse recovery time DUT tr 10% tp t ΙF t rr t ΙF Oscillograph 90% Ι R = 20 mA EHN00020 VR Pulse generator: tp = 100ns, D = 0.
05, t r = 0.
6ns, R i = 50Ω Oscillograph: R = 50Ω, tr = 0.
35ns, C ≤ 1pF Semiconductor Group Semiconductor Group 22 Jul-27-1998 1998-11-01 BAW 78M Forward current IF = f (TA*;TS) * Package mounted on epoxy 1200 mA TS 800 IF TA 600 400 200 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 2 10 2 K/W IFmax / IFDC - RthJS 10 1 10 1 10 0 0.
5 0.
2 0.
1 0.
05 0.
02 0.
01 0.
005 D=0 10 0 -6 10 D=0 0.
005 0.
01 0.
02 0.
05 0.
1 0.
2 0.
5 10 -1 -6 10 10 -5 10 -4 ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)