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BAW78M

Infineon Technologies AG
Part Number BAW78M
Manufacturer Infineon Technologies AG
Description Silicon Switching Diode
Published Jun 3, 2005
Detailed Description BAW78M Silicon Switching Diode  Switching applications  High breakdown voltage 4 5 3 2 1 VPW05980 Type BAW78M Maximu...
Datasheet PDF File BAW78M PDF File

BAW78M
BAW78M

Overview
BAW78M Silicon Switching Diode  Switching applications  High breakdown voltage 4 5 3 2 1 VPW05980 Type BAW78M Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Marking GDs 1=A Pin Configuration Package 2 = C 3 n.
c.
4 n.
c.
5 = C SCT595 Symbol VR VRM IF IFM IFS Ptot Tj Tstg Values 400 400 1 1 10 1 150 -65 .
.
.
150 Unit V A Surge forward current, t = 1 s Total power dissipation , TS 110 °C Junction temperature Storage temperature W °C Thermal Resistance Junction - soldering point 1) RthJS  40 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-21-2001 BAW78M Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 1 A IF = 2 A Reverse current VR = 400 V Reverse current VR = 400 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured at IR = 20mA trr 1 µs CD 10 pF Symbol min.
V(BR) VF IR IR 400 Values typ.
max.
- Unit V - 1.
6 2 1 50 µA Test circuit for reverse recovery time D.
U.
T.
ΙF Oscillograph EHN00019 Pulse generator: tp = 10µs, D = 0.
05, tr = 0.
6ns, Ri = 50 Oscillograph: R = 50, tr = 0.
35ns, C  1pF 2 Aug-21-2001 BAW78M Forward current IF = f (TS ) 1200 mA 800 IF 600 400 200 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f(tp ) Permissible Pulse Load IFmax / IFDC = f(tp) 10 2 10 2 K/W IFmax / IFDC - 10 1 10 1 10 0 0.
5 0.
2 0.
1 0.
05 0.
02 0.
01 0.
005 D=0 10 0 -6 10 D=0 0.
005 0.
01 0.
02 0.
05 0.
1 0.
2 0.
5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 3 Aug-21-2001 BAW78M Forward current IF = f (VF ) TA = 25°C 10 1 BAS 78A.
.
.
D EHB00047 Reverse current IR = f (TA) VR = 400V BAS 78A.
.
.
D EHB00048 10 5 ΙF A nA ΙR 10 0 10 5 4 max 10 -1 10 5 3 typ ...


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