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BAX12

Philipss
Part Number BAX12
Manufacturer Philipss
Description Controlled avalanche diode
Published Jun 3, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of Ap...
Datasheet PDF File BAX12 PDF File

BAX12
BAX12

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • Switching speed: max.
50 ns • General application • Continuous reverse voltage: max.
90 V • Repetitive peak reverse voltage: max.
90 V • Repetitive peak forward current: max.
800 mA • Repetitive peak reverse current: max.
600 mA • Capable of absorbing transients repetitively.
Marking code: BAX12.
handbook, halfpage k BAX12 DESCRIPTION The BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.
a MAM246 APPLICATIONS • Switching of inductive loads in semi-electronic telephone exchanges.
Fig.
1 Simplified outline (SOD27; DO35) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.
4 t = 1 µs t = 100 µs t = 10 ms Ptot IRRM ERRM Tstg Tj Notes 1.
It is allowed to exceed this value; see Figs 8 and 9.
Care should be taken not to exceed the IRRM rating.
2.
Device mounted on an FR4 printed circuit-board; lead length 10 mm.
total power dissipation repetitive peak reverse current repetitive peak reverse energy storage temperature junction temperature tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C Tamb = 25 °C; note 2 − − − − − − −65 − 55 15 9 450 600 5.
0 +200 200 A A A mW mA mJ °C °C note 1 note 1 see Fig.
2; note 2 CONDITIONS MIN.
− − − − MAX.
90 90 400 800 V V mA mA UNIT 1996 Sep 17 2 Philips Semiconductors Product specification Controlled avalanche diode ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified.
SYMBOL VF PARAME...


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