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BAX18

Philipss
Part Number BAX18
Manufacturer Philipss
Description General purpose diode
Published Jun 3, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX18 General purpose diode Product specification Supersedes data of April 1...
Datasheet PDF File BAX18 PDF File

BAX18
BAX18

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX18 General purpose diode Product specification Supersedes data of April 1996 1996 Sep 18 Philips Semiconductors Product specification General purpose diode FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • Switching speed: max.
50 ns • General application • Continuous reverse voltage: max.
75 V • Repetitive peak reverse voltage: max.
75 V • Repetitive peak forward current: max.
2 A.
The diode is type branded.
handbook, halfpage k BAX18 DESCRIPTION The BAX18 is a general purpose diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.
a MAM246 APPLICATIONS • Rectifier applications.
Fig.
1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.
4 t = 1 µs t = 100 µs t = 10 ms Ptot Tstg Tj Note 1.
Device mounted on an FR4 printed circuit-board; lead length 10 mm.
total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 55 15 9 450 +200 200 A A A mW °C °C see Fig.
2; note 1 CONDITIONS MIN.
− − − − MAX.
75 75 500 2000 V V mA mA UNIT 1996 Sep 18 2 Philips Semiconductors Product specification General purpose diode ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified.
SYMBOL VF PARAMETER forward voltage see Fig.
3 IF = 300 mA IF = 2 A; Tj = 150 °C IR reverse current see Fig.
5 VR = 75 V VR = 75 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.
6 when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.
7 − − − − 5 100 35 50 − − 1.
0 1.
5 CONDITIONS MIN.
MAX.
BAX18 UNIT V V µA µA pF ns THERMAL CHARACTERISTICS SYMBO...


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