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SPD50N06S2L-13

Infineon Technologies
Part Number SPD50N06S2L-13
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Jun 7, 2005
Detailed Description SPD50N06S2L-13 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 12.7 50 P- TO252 -3-11 ...
Datasheet PDF File SPD50N06S2L-13 PDF File

SPD50N06S2L-13
SPD50N06S2L-13

Overview
SPD50N06S2L-13 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 12.
7 50 P- TO252 -3-11 V mΩ A • Enhancement mode • Logic Level • Avalanche rated • dv/dt rated Type SPD50N06S2L-13 Package Ordering Code P- TO252 -3-11 Q67060- S7421 Marking PN06L13 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1) TC=25°C Symbol ID Value 50 50 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 200 240 13.
6 6 ±20 136 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=50 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=50A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPD50N06S2L-13 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) Symbol min.
RthJC RthJA RthJA - Values typ.
0.
69 max.
1.
1 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.
2 Values typ.
1.
6 max.
2 Unit V Gate threshold voltage, VGS = V DS ID=80µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C µA 0.
01 1 1 11.
8 9.
4 1 100 100 16.
7 12.
7 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.
5V, I D=34A Drain-source on-state resistance V GS=10V, I D=34A 1Current limited by bondwire ; with an RthJC = 1.
1K/W the chip is able to carry ID= 72A at 25°C, for detailed information see app.
-note ANPS071E available at www.
infineon.
com/optimos 2Defined by design.
Not subject to production test.
3Device on 40mm*40...


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