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SPD50N06S2L-13

Infineon
Part Number SPD50N06S2L-13
Manufacturer Infineon
Description Power Transistor
Published Apr 14, 2015
Detailed Description OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Avalanche rated • dv/dt rated SPD50N06...
Datasheet PDF File SPD50N06S2L-13 PDF File

SPD50N06S2L-13
SPD50N06S2L-13

Overview
OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Avalanche rated • dv/dt rated SPD50N06S2L-13 Product Summary VDS 55 V RDS(on) 12.
7 mΩ ID 50 A P- TO252 -3-11 Type Package Ordering Code Marking SPD50N06S2L-13 P- TO252 -3-11 Q67060- S7421 PN06L13 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) ID TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=50 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=50A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 50 50 200 240 13.
6 6 ±20 136 -55.
.
.
+175 55/175/56 Unit A mJ kV/µs V W °C Page 1 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) SPD50N06S2L-13 Symbol Values Unit min.
typ.
max.
RthJC RthJA RthJA - 0.
69 1.
1 K/W - - 100 - - 75 - - 50 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
Static Characteristics Drain-source breakdown voltage V(BR)DSS 55 - -V VGS=0V, ID=1mA Gate threshold voltage, VGS = VDS VGS(th) 1.
2 1.
6 2 ID=80µA Zero gate voltage drain current VDS=55V, VGS=0V, Tj=25°C VDS=55V, VGS=0V, Tj=125°C Gate-source leakage current IDSS IGSS µA - 0.
01 1 - 1 100 - 1 100 nA VGS=20V, VDS=0V Drain-source on-state resistance RDS(on) - 11.
8 16.
7 mΩ VGS=4.
5V, ID=34A Drain-source on-state resistance RDS(on) - 9.
4 12.
7 VGS=10V, ID=34A 1Current limited by bondwire ; with an RthJC = 1.
1K/W the chip is able to carry ID= 72A at 25°C, for detailed information see app.
-note ANPS071E available at www.
infineon.
com/optimos 2Defined by design.
Not subject to production t...


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