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TMD5872-2

Toshiba
Part Number TMD5872-2
Manufacturer Toshiba
Description Microwave Power MMIC Amplifier
Published Jun 15, 2005
Detailed Description MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n n High Power P1dB=34dBm(TYP.) High Pow...
Datasheet PDF File TMD5872-2 PDF File

TMD5872-2
TMD5872-2

Overview
MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n n High Power P1dB=34dBm(TYP.
) High Power Added Efficiency ηadd=21%(TYP.
) n n TMD5872-2 PRELIMINARY High Gain G1dB=28dB(TYP.
) Broadband Operation f=5.
8-7.
2GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25oC) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATURE STORAGE TEMPERATURE SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm oC oC RATINGS 15 -10 10 -30 - +80 -65 - +175 RF PERFORMANCE SPECIFICATIONS (Ta=25 oC) CHARACTERISTICS Operaing Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Gain Flatness Drain Current Power Added Efficiency VSWRin (small signal) G IDD ηadd VSWRin dB A % 1.
2 21 2.
0:1 ±2.
0 SYMBOL f P1dB CONDITION UNIT GHz dBm MIN.
5.
8 32 25 TYP.
34 28 MAX.
7.
2 - VDD=10V G1dB VGG=-5V dB 1.
6 3.
0:1 u u The information contained herein is presented only as a guide for the applications of our products.
No responsibility is assumed...


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