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SSM9915H

Silicon Standard
Part Number SSM9915H
Manufacturer Silicon Standard
Description N-Channel Enhancement-Mode Power MOSFET
Published Jun 18, 2005
Detailed Description www.DataSheet4U.com SSM9915H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low...
Datasheet PDF File SSM9915H PDF File

SSM9915H
SSM9915H

Overview
www.
DataSheet4U.
com SSM9915H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.
5V gate drive Low drive current Simple drive requirement G S D BV DSS R DS(ON) ID 20V 50mΩ 20A Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current 1 Rating 20 ± 10 20 16 41 26 0.
2 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ DataShee DataSheet4U.
com Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 4.
8 110 Unit ℃/W ℃/W DataSheet4U.
com Rev.
2.
01 6/26/2003 www.
SiliconStandard.
com 1 of 6 DataSheet 4 U .
com www.
DataSheet4U.
com SSM9915H,J Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
20 0.
5 - Typ.
0.
03 13 7.
5 0.
9 4 4.
5 49.
5 12 6 195 126 50 Max.
Units 50 80 1 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.
5V, ID=6A VGS=2.
5V, ID=5.
2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125oC) o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS= ± 10V ID=10A VDS=20V VGS=5V VDS=10V ID=10A RG=3.
3Ω,VGS=5V RD=1Ω VGS=0V DataSheet4U.
com VDS=20V f=1.
0MHz Gate-Sourc...


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