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SSM9916H

Silicon Standard
Part Number SSM9916H
Manufacturer Silicon Standard
Description N-Channel Enhancement-Mode Power MOSFET
Published Sep 21, 2005
Detailed Description SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Simpl...
Datasheet PDF File SSM9916H PDF File

SSM9916H
SSM9916H

Overview
SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.
5V gate drive Low drive current Simple drive requirement Description D G S Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TC=25°C ID @ TC=125°C IDM PD @ TC=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient BV DSS RDS(ON) ID 18V 25mΩ 35A GD S TO-252(H) GD S TO-251(J) Rating 18 ± 12 35 16 90 50 0.
4 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max.
Max.
Value 2.
5 110 Unit °C/W °C/W Rev.
2.
02 1/29/2004 www.
SiliconStandard.
com 1 of 6 SSM9916H,J Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS ∆ BV DSS/∆ Tj Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA 18 - -V - 0.
03 - V/°C RDS(ON) Static Drain-Source On-Resistance VGS=4.
5V, ID=6A - - 25 mΩ VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=125oC) Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=2.
5V, ID=5.
2A VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=18V, VGS=0V VDS=18V ,VGS=0V VGS= ± 12V ID=18A VDS=18V VGS=5V VDS=10V ID=18A RG=3.
3 Ω ,VGS=5V RD=0.
56Ω ...


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