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STP6NA60FI

ST Microelectronics
Part Number STP6NA60FI
Manufacturer ST Microelectronics
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Published Jun 20, 2005
Detailed Description STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP6NA60 STP6NA60FI s s s s s s s V DSS...
Datasheet PDF File STP6NA60FI PDF File

STP6NA60FI
STP6NA60FI

Overview
STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP6NA60 STP6NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 1.
2 Ω < 1.
2 Ω ID 6.
5 A 3.
9 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP6NA60 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (RG S = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature o o Value STP6NA60FI 600 600 ± 30 6.
5 4.
3 26 125 1  -65 to 150 150 3.
9 2.
6 26 45 0.
36 2000 Unit V V V A A A W W/o C V o o C C (•) Pulse width limited by safe operating area November 1996 1/10 STP6NA60/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1 62.
5 0.
5 300 ISOWATT220 2.
78 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (...


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