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STP6NA60FP

ST Microelectronics
Part Number STP6NA60FP
Manufacturer ST Microelectronics
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Published Jun 20, 2005
Detailed Description STP6NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP6NA60F P s s s s s s s V DSS...
Datasheet PDF File STP6NA60FP PDF File

STP6NA60FP
STP6NA60FP

Overview
STP6NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP6NA60F P s s s s s s s V DSS 600 V R DS(on) < 1.
2 Ω ID 3.
9 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 3 2 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P t ot V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 o C o Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) St orage Temperature Max.
Operating Junction Temperature Valu e 600 600 ± 30 3.
9 2.
6 26 40 0.
32 2000 -65 to 150 150 Unit V V V A A A W o W/ C V o C o C (•) Pulse width limited by safe operating area October 1997 1/5 STP6NA60FP THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 3.
12 62.
5 0.
5 300 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) Max Valu e 6.
5 215 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcas...


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