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STP9NB50

ST Microelectronics
Part Number STP9NB50
Manufacturer ST Microelectronics
Description PowerMesh MOSFET
Published Jul 30, 2005
Detailed Description N-CHANNEL 500V - 0.75 Ω - 8.6 A TO-220/TO-220FP PowerMesh™ MOSFET TYPE STP9NB50 STP9NB50FP s s s s s STP9NB50 STP9NB50F...
Datasheet PDF File STP9NB50 PDF File

STP9NB50
STP9NB50

Overview
N-CHANNEL 500V - 0.
75 Ω - 8.
6 A TO-220/TO-220FP PowerMesh™ MOSFET TYPE STP9NB50 STP9NB50FP s s s s s STP9NB50 STP9NB50FP VDSS 500 V 500 V RDS(on) < 0.
85 Ω < 0.
85 Ω ID 8.
6 A 4.
9 A TYPICAL RDS(on) = 0.
75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 1 2 3 TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/d...


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