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IRFP254B

Fairchild
Part Number IRFP254B
Manufacturer Fairchild
Description 250V N-Channel MOSFET
Published Aug 3, 2005
Detailed Description IRFP254B November 2001 IRFP254B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field...
Datasheet PDF File IRFP254B PDF File

IRFP254B
IRFP254B

Overview
IRFP254B November 2001 IRFP254B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features • • • • • • 25A, 250V, RDS(on) = 0.
14Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! TO-3P G DS IRFP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF...


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