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IRFP250

IXYS
Part Number IRFP250
Manufacturer IXYS
Description Power MOSFET
Published Jan 9, 2016
Detailed Description Standard Power MOSFET N-Channel Enhancement Mode IRFP 250 VDSS ID (cont) RDS(on) = 200 V = 30 A = 85 mΩ Symbol Test...
Datasheet PDF File IRFP250 PDF File

IRFP250
IRFP250

Overview
Standard Power MOSFET N-Channel Enhancement Mode IRFP 250 VDSS ID (cont) RDS(on) = 200 V = 30 A = 85 mΩ Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg Md Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Maximum Ratings 200 V 200 V ±20 V ±30 V 30 A 120 A 30 A 19 mJ 5 V/ns TO-247 AD G = Gate, S = Source, D (TAB) D = Drain, TAB = Drain 190 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 1.
13/10 Nm/lb.
in.
6g 300 °C Features l International standard package JEDEC TO-247 AD l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High commutating dv/dt rating l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ ...


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