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IRFP250

Inchange Semiconductor
Part Number IRFP250
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Aug 8, 2016
Detailed Description iscN-Channel MOSFET Transistor IRFP250 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V ·Enhancement ...
Datasheet PDF File IRFP250 PDF File

IRFP250
IRFP250

Overview
iscN-Channel MOSFET Transistor IRFP250 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤85mΩ @VGS=10V ·Enhancement mode: Vth = 2.
0 to 4.
0V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pulsed 120 A PD Total Dissipation @TC=25℃ 190 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.
65 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor IRFP250 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVD...


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