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STB6NB90

ST Microelectronics
Part Number STB6NB90
Manufacturer ST Microelectronics
Description N-CHANNEL Power MOSFET
Published Aug 3, 2005
Detailed Description ® STB6NB90 N - CHANNEL 900V - 1.7Ω - 5.8A - D2PAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STB6NB90 s s s s s s V DSS ...
Datasheet PDF File STB6NB90 PDF File

STB6NB90
STB6NB90

Overview
® STB6NB90 N - CHANNEL 900V - 1.
7Ω - 5.
8A - D2PAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STB6NB90 s s s s s s V DSS 900 V R DS(on) < 2.
0 Ω ID 5.
8 A TYPICAL RDS(on) = 1.
7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL (500 UNITS) D2PAK TO-263 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol...


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