Part Number STB6NB90
Manufacturer ST Microelectronics
Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performa...
Features V DS V DGR V GS ID ID I DM (
• ) P tot dv/dt( 1 ) Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C...

File Size 48.65KB
Datasheet STB6NB90 PDF File

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